2SA1166 transistor equivalent, power transistor.
*Power amplifier applications
*Recommended for 100W high-fidelity audio frequency
amplifier output stage
ABSOLU.
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
*Good Linearity of hFE
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power amplifier applicatio.
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